If computer chips could be built from semiconductors just one atom thick, they could pack far more transistors into a smaller ...

ASML, TSMC, and imec demonstrated 2D material transistors at 50nm pitch with 94% yield on standard wafers, advancing the post-silicon ...

A new two-dimensional semiconductor material could address a major limitation in next-generation chip design, enabling ...

After dominating the electronics industry for decades, conventional silicon-based transistors are gradually approaching their limits, which is preventing engineers from further reducing their size ...

A new approach could help make future AI chips smaller and more energy-efficient. A KAIST-led research team has used a single material to address one of the major obstacles facing atomically thin ...

CFET (Complementary FET) is a structure in which two types of transistors, n-type and p-type, are stacked vertically in two ...

Researchers at Huazhong University of Science and Technology, Hong Kong Polytechnic University, University of California, Santa Barbara, and National University of Singapore published a technical ...

Semiconducting transition metal dichalcogenides (TMDs) are a class of layered materials exhibiting unique optoelectronic properties that could be leveraged to develop transistors, sensors and other ...

A tin diselenide tunneling injector supplies charge efficiently to both n- and p-type 2D semiconductor channels, simplifying the design of ultrathin CMOS devices. (Nanowerk News) A new approach could ...

Complementary Metal-Oxide-Semiconductor (CMOS) technology is a vital part of modern electronics, used in designing and manufacturing integrated circuits (ICs) that power many digital devices. CMOS ...

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